ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The effects of different electric fields (4.2, 8.3, 12.5, 16.7 and 20.8 Vcm−1) on the sheet resistance, R s, and optical band gap, E obg, of As2Se3 samples (1×105nm) that were photodoped by Ag (5×103nm) have been studied. The R s and E obg of samples subjected to an electric field of 12.5 Vcm−1 decrease linearly to a distance of 5 mm from both electrodes, and then saturate at larger distances. This result suggests that there is a critical value of the electric field which affects photodoping. The dependence of R s and E obg on the distance from the electrodes shows similar profiles for these electrodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00541632
