ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Recent progress made in the use of time-resolved pump-probe Raman scattering technique to study the dynamics of photo-excited nonequilibrium carriers and LO-phonons in III–V semiconductors up to the sub-picosecond time scale will be discussed. It will be shown how this technique has allowed direct time-domain measurements of electron-LO-phonon scattering times for “hot” carriers and lifetimes for “hot” LO-phonons in semiconductors like GaAs. The presentation will include new experimental results of Kash, Jha and Tsang on picosecond Raman studies of the Fröhlich interaction in alloys like Al x Ga 1−x As and In x Ga 1−x As. The present theoretical understanding of the dynamics of the highly excited carriers, dominated by strong LO-phonon emission, will be examined along with the discussion of a recent calculation of transient electrical conductivity of such hot carriers, showing extremely interesting oscillations with respect to the pump laser frequency, on the scale of the long wavelength LO-phonon frequency, and a highly nonlinear behaviour as a function of time.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02394862
