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  • 1
    Electronic Resource
    Electronic Resource
    Radiative recombination in hydrogenated amorphous silicon (1980)
    Springer
    Czechoslovak journal of physics 30 (1980), S. 355-364 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Hydrogenated amorphous silicon exhibits efficient optical transitions across a gap larger than that of crystalline Si. Hydrogen passivates the dangling bonds and endows the material with a reduced number of non-radiative recombination centers. A gap widening has been observed in other hydrogenated semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01596261
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