ISSN:
1573-4854
Keywords:
porous silicon carbide
;
oxidation
;
effective medium theory
;
infrared reflectance (or IR)
;
reststrahlen
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract We present a study of the infrared reflectance of porous silicon carbide (PSC) formed by the electrochemical dissolution of silicon carbide substrates of both 6H and 4H polytypes. The reflectance from n-PSC, both as-anodized and passivated, is reported for the first time. The passivation of PSC has been accomplished using a short thermal oxidation. Fourier transform infrared (FTIR) reflectance spectroscopy is employed ex situ after different stages of the thermal oxidation process. The characteristics of the reststrahlen band normally observed in bulk SiC are altered by anodization; further changes in the reflectance spectra occur following oxidation for different periods of time. An effective medium theory model that includes air, SiC and SiO2 as component materials is shown to characterize the observed changes in the reflectance spectra after different stages of PSC oxidation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009648518136
