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  • 1
    Electronic Resource
    Electronic Resource
    Strain-induced properties of epitaxial VOx thin films (2005)
    Springer
    The European physical journal 43 (2005), S. 195-200 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films grown under tensile strain on MgO substrates. A clear crossover from metallic to semiconducting behavior is observed when increasing the oxygen content x. Apparently, the application of strain induces a Mott-Hubbard insulator-to-metal transition in VOx〈1. The VOx/SrTiO3 films show an unexpected large positive magnetoresistance effect at low temperatures, which is not found in the VOx films grown under tensile strain on MgO or on a substrate with a similar lattice parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2005-00042-6
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