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  • 1
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Chemical Kinetics 10 (1978), S. 101-110 
    ISSN: 0538-8066
    Keywords: Chemistry ; Physical Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The title reaction has been investigated in the temperature range 667-715K. The only reaction products were trifluorosilyl iodide and hydrogen iodide. The rate law \documentclass{article}\pagestyle{empty}\begin{document}$$ - \frac{{d\left[{{\rm I}_2} \right]}}{{dt}} = \frac{{k\left[{{\rm I}_2} \right]^{1/2} \left[{{\rm F}_3 {\rm SiH}} \right]}}{{1 + k\prime \left[{{\rm HI}} \right]/\left[{{\rm I}_2} \right]}} $$\end{document} was obeyed over a wide range of iodine and trifluorosilane pressures. This expression is consistent with an iodine atom abstraction mechanism and for the step \documentclass{article}\pagestyle{empty}\begin{document}$$ {\rm I}^ \cdot + {\rm F}_3 {\rm SiH}\mathop {\longrightarrow}\limits^1 {\rm F}_3 {\rm Si}^\cdot + {\rm HI} $$\end{document} log k1(dm3/mol·sec) = (11.54 ± 0.17) - (130.5 ± 2.2 kJ/mol)/RT In 10 has been deduced. From this the bond dissociation energy D(F3Si—H) = (419 ± 5) kJ/mol (100.1 kcal/mol) is obtained. The kinetic andthermochemical implications of this value are discussed.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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