ISSN:
0142-2421
Schlagwort(e):
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Physik
Notizen:
Damageless conditions in AES measurement were examined carefully on both thermally oxidized and photochemical vapour deposited amorphous SiO2 films as a function of dose rate and total dose. The lower dose rate resulted in the formation of a higher density of oxygen-deficient defects under the constant total dose condition. Among the films examined, it was found that F-doped films prepared by photochemical vapour deposition best resisted electron damage. The results are discussed using the model of defect generation consisting of a cascade process, bond breaking and diffusion of oxygen.
Zusätzliches Material:
8 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/sia.740160190
