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Submicron patterns in substituted polystyrene resists by focused-ion-beam lithography (1983)

Brault, R. G. ; Kubena, R. L. ; Jensen, J. E.

Stamford, Conn. [u.a.] : Wiley-Blackwell

Polymer Engineering and Science 23 (1983), S. 941-946

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ISSN: 0032-3888

Keywords: Chemistry ; Chemical Engineering

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Submicron lines in negative working, substituted polystyrene resists by focused-ion-beam lithography were demonstrated. These features were transferred into an underlying molybdenum layer by plasma etching using the resist as an etch mask, with the minimum continuous line having a width of 0.20 μm.

Additional Material: 9 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/pen.760231705

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