ISSN:
1057-9257
Keywords:
As-S wafers
;
X-ray exposure
;
microstructuring
;
bulk optic element
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The possibilities of ‘resistless’ microstructuring of As36·1S63·9 wafers by soft X-ray irradiation and wet alkaline etching have been investigated. Scanning electron microscopy is used to study the influence of the exposure and processing parameters on the depth and acuity of the patterned structures. Structures 1 μm wide are obtained by irradiation with an energy flux of 2000 mJ cm-2, followed by etching in a solution of pH 10·8 at a temperature of 23°C for a processing time of 18 min. It is established that by X-ray irradiation and suitable processing of As36·1S63·9 wafers, microstructures of a depth up to 0·65 μm could be patterned. The structured wafers could be used as diffraction elements for IR optics. © 1998 John Wiley & Sons, Ltd.
Additional Material:
7 Ill.
Type of Medium:
Electronic Resource
