ISSN:
1057-9257
Keywords:
Anisotropy
;
Dissolution
;
Microrelief
;
II-VI semiconductor compounds
;
Light figures
;
Etching
;
Electron beam lasers
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The shape, crystallographic orientation and size of microrelief elements of various surfaces of CdS, ZnSe and ZnO monocrystals after chemical etching have been studied. When illuminated with a focused laser beam, the microrelief creates a symmetric light pattern, or light figures, on the opposite surface whose shape corresponds to the crystal symmetry.The effects of the dissoltion rate and etching time on the form, size and angles of the microrelief elements in the temperature interval from 263 to 333 K were investigated. During etching, laser light was also used to convert the process of selective etching into a polishing process. To elucidate the relationship between the crystallographic orientation of the microrelief elements and the dissolution anisotropy, mean etching rates were determined and polar diagrams of resistance to dissolution were constructed for {1120} and {0001} by the Gross method. The relation between the kinetics of dissolution and the structure of the chemical bonds is discussed.The light figures formed by the surface microrelief enabled us to carry out the approximate orientation of semiconductor planes and solid samples. In the early stages of dissolution one may determine the density and distribution of the microscopic etch pits. The microrelief created on the side surfaces and the ‘fully reflected’ mirrors of II-VI semiconductor lasers pumped by electron beam or optical radiation promote the multiple enhancement of laser power and efficiency.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030110
