ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The physical model of fixed-abrasive diamond wire-sawing monocrystalline silicon wasfounded to analyze the elastic deformation of the wire, supposing that every grit was connected tothe surface of the wire by a spring. Ignoring lateral vibration of the wire, the geometrical model ofwire-sawing was founded; the average cut depth of single grit was calculated theoretically. Basedthe indentation fracture mechanics and investigations on brittle-ductile transition of machiningmonocrystalline silicon, the removal mechanism and surface formation was studied theoretically. Itshows that in the case of wire-sawing velocity of 10m/s or higher, infeed velocity of 0.20mm/s anddiamond grain size of 64μm or smaller, the chip formation and material removal is in a brittleregime mainly, but the silicon wafer surface formation is sawed in a ductile regime. The size of theabrasives, the wire-saw velocity and infeed velocity can influence the sawing process obviously
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.450.pdf
