Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Review of Scientific Instruments
71 (2000), S. 1479-1487
ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
An ultrahigh vacuum chemical beam epitaxy growth system has been built using multiple supersonic jets as precursors. Supersonic jets provide very high flux to the growth front while maintaining low growth pressures (10−5 Torr). Activation barriers to chemisorption are overcome by using hyperthermal (1–10 eV) precursors for heteroepitaxial growth. Improvement in growth rates and higher degrees of structural orientation are obtained at lower temperatures. Wide band gap semiconductors (SiC, GaN, and AlN) are deposited on silicon substrates using neutral chemical precursors. Epitaxial growth of SiC on silicon has been obtained at the lowest temperatures reported to date using a supersonic jet of methylsilane. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1150484
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