Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 1989-1993
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This paper examines the rate equations governing light-induced degradation and thermal recovery of undoped a-Si:H films. For early degradation the recombination came primarily from band-to-band transitions and the degradation rate (dN/dt) is proportional to the inverse of the square of the spin density (1/N2). When electron paramagnetic resonance active dangling bonds is greater than 1018 cm−3, the recombination through defects becomes more significant, and the degradation rate has a form of A(1/N2)−B(1/N)+C−DN. Furthermore, the temperature dependence on the changes of the photoconductivity decay and recovery indicates that both degradation and recovery are thermally activated processes, and an activation energy of ∼0.2 and ∼1.4 eV was derived for either process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339538
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