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Annealing temperature dependence of TC of thin-film Gd grown on a glass substrate (1988)

Nakamura, O. ; Baba, K. ; Ishii, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 3614-3619

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Thin films of Gd were grown on a glass substrate with a sputtering technique. Measurements of x-ray diffraction, magnetization, and electrical resistance were carried out for different samples that were annealed at various temperatures after the deposition. The deposited films are polycrystalline of hcp structure with preferred orientation, with the (100) plane parallel to the sample surface. The estimated Curie temperature TC of these films changes between 273 and 293 K, depending on the annealing temperature. It is found that this variation of TC is correlated with the relaxation of lattice imperfections.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341398

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