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Electro- and photo-luminescent quenching effects imposed by field-induced ionization of the Eu2+ luminescent centers in CaS:Eu thin films (1991)

Ando, M. ; Ono, Y. A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 7225-7230

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: It is found that both the high-field electroluminescent (EL) and photoluminescent intensities of CaS:Eu thin films were quenched by an applied electric field. This quenching was found to be caused by a field-induced ionization of impact-excited Eu2+ luminescent centers. This ionization was known to play an important role in the memory and slow response characteristics of CaS:Eu thin-film electroluminescent devices. Evidence for field-induced ionization of Eu2+ was obtained from the following measurements of CaS:Eu; (i) the first and second EL emission peaks, (ii) photoluminescence, and (iii) photocapacitance.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347617

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