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Stimulated emission and gain measurements in molecular-beam epitaxially grown CdTe (1991)

Hays, J. M. ; Song, J. J. ; Wu, O. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 6612-6616

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Stimulated emission has been observed in molecular-beam epitaxially (MBE) grown films of cadmium telluride (CdTe), using a nanosecond pulsed dye laser as an excitation source. The films were 2.0–2.4 μm thick. Stimulated emission (SE) is seen to arise at several energy positions of the spectra. The different SE peaks exhibited different gain values. The gain was measured using the single beam method, by varying the length of excitation. The bulk CdTe sample studied exhibited stronger saturation effects than those seen in the MBE films.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.348874

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