Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 456-461
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The Er-doped InGaAsP epitaxial layers lattice-matched to InP with wavelengths of 1.29 and 1.55 μm have been grown by liquid-phase epitaxy. When the Er amount doped in the InGaAsP growth solution is above 0.32 wt %, it will have a fairly rough surface morphology with many extensive deposits of erbium hydride and oxide. The lattice mismatch normal to the wafer surface between InGaAsP layer and InP substrate decreases linearly with the Er weight percent in the grown solution. From the wavelength-dispersive-x-ray-spectrometer analysis, we find the solid composition of the In1−xGaxAsyP1−y layer has been changed and may be due to the formation of microparticles of Er compounds, such as ErAs or ErP. This inference is also supported by photoluminescence (PL) measurements which show that the PL peak wavelength decreases with increasing Er wt %. The full width at half maximum of PL peak associated with the near band-gap transition has been effectively reduced and exhibits the narrowest value of 9.1 and 6.3 meV for the 1.29- and 1.55-μm-wavelength InGaAsP layers in the presence of Er. In addition, the carrier concentration of Er-doped InGaAsP layers are around 3–30×1014 cm−3 and is one to two orders of magnitude lower than those of undoped layers. These results can be attributed to the donor gettering by the rare-earth element of Er. The Er-related luminescence lines locate between 1.503 and 1.528 μm which differ from those previously reported at ∼1.54 μm and can only be observed for the 1.29-μm but not for the 1.55-μm-wavelength InGaAsP layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350677
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