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Positron annihilation in SiO2/Si structure at low temperature (1995)

Uedono, A. ; Moriya, T. ; Tanigawa, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 3269-3273

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Annihilation characteristics of positrons in SiO2/Si structure were studied by using a monoenergetic positron beam in the temperature range between 50 K and room temperature. In the SiO2 film, positrons formed positronium (Ps) and they annihilated from localized states in open spaces. Below 100 K, the Ps formation was found to be suppressed. This fact was attributed to the trapping of positrons by point defects in the SiO2 film at low temperature. The depth distribution of such traps was not homogeneous; its concentration in the central region of the SiO2 film was higher than that in the regions near the surface or the interface. The potential of monoenergetic positrons for the detection of the point defects provides unique information for depth distributions of hole traps in SiO2 films. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360016

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