ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results on structural and magnetic characterization of radio frequency sputtered thin films of La0.74Pb0.26MnOz on (100) Si are presented. Stoichiometric films with a thickness of 0.6 μm showing (110) textured growth were deposited in a mixed argon–oxygen atmosphere. The low temperature magnetization is 10% smaller than the expected value for a collinear ferromagnetic order in the oxide. Zero-field resistivity data show a metal-to-semiconductor transition centered at Tms=250 K. Data on magnetoresistance (MR)=[ρ(0)−ρ(H)]/ρ(0) versus temperature reveal the following important features: (i) a maximum value of 22% for H=2 T at the metal-to-insulator transition temperature, (ii) MR value of 15%–22% over the entire temperature range 4.2–300 K, and (iii) a substantial MR, ∼10% even at temperatures as high as 380 K, well above the Curie temperature. Data on the temperature dependence of ferromagnetic resonance linewidth at 9.4 GHz show a discontinuity at Tms. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361333
