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Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films (1999)

Fontcuberta, J. ; Bibes, M. ; Martínez, B.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 4800-4802

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370486

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