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Time-of-flight study on the thermal etching of Al with Cl2 (1988)

Janssen, R. J. A. A. ; Kolfschoten, A. W. ; van Veen, G. N. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 98-100

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping disk with slots in a pseudorandom sequence on its periphery. TOF distributions and temperature-dependent reaction product yields are measured for the products desorbing from the chlorinated aluminum substrate in the temperature range from 300 to 900 K. A reaction mechanism will be discussed in some detail.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99046

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