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High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer (1988)

Tanaka, T. ; Kawano, T. ; Kajimura, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2471-2473

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10−13 Hz−1 under 3–4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100216

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