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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 783-785 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of hydrogenated amorphous silicon-carbon alloys has been analyzed by small-angle x-ray scattering, infrared absorption, and density measurements. Decreasing density with C incorporation is due to microvoids about 0.6 nm in average radius, which are either approximately spherical in shape or randomly oriented nonspheres. The microvoid number density increases from about 5×1019/cm3 for a-Si:H to about 4×1020/cm3 for a-Si0.7 C0.3 :H. The CH3 species probably causes the enhanced microvoid formation in these alloys. A large fraction of the microvoid surfaces is not hydrogenated.
    Type of Medium: Electronic Resource
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