ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Multiquantum well structures of InP/Ga0.47In0.53As were grown by metalorganic molecular beam epitaxy for the fabrication of infrared photodetectors. The thickness and composition uniformity of the wells was determined by high-resolution x-ray diffraction, photoluminescence, and photoluminescence excitation experiments. The intersubband absorption spectrum of the multiquantum well structures optimized for infrared detection is found to be in the 7–8 μm range.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105411