Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2508-2510
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the current-voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As the negative gate voltage is progressively increased I(V) becomes asymmetric. In particular the peak-to-valley ratio in forward bias is decreased from (approximately-equal-to)20 to (approximately-equal-to)1, but in reverse bias remains constant (approximately-equal-to)20. This arises from a lateral variation of the voltage drop across the emitter tunnel barrier, which in forward bias leads to a smearing of the resonance. We discuss the relationship between our experiment and the low peak-to-valley ratios of two-terminal submicron resonant tunneling diodes observed by other groups.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106949
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