Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2619-2621
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
X-ray diffraction was used to measure microtwinning in (111) CdTe epitaxial films grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition. The concentration of microtwins is high near the interface but drops off rapidly with distance. For films grown to thicknesses up to ≈10 μm, the microtwin content is constant and relatively low (much less than 1 vol %) away from the interface. For films grown more than ≈10 μm thick there is a substantial increase in the microtwin content. These microtwins are concentrated near the film surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106899
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