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Reliability and microstructure of Al-Si-V-Pd alloy films for use in ultralarge scale integration (1994)

Dirks, A. G. ; Augur, R. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 704-706

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: New data on a highly reliable interconnect material based on aluminum will be presented. As compared with conventional Al-Si-Cu alloy films, quaternary Al-Si-V-Pd films with only 0.1 at. % vanadium and 0.1 at. % palladium combine excellent plasma etchability with good corrosion resistance. Electromigration tests of Al-Si-V-Pd films have shown a surprisingly high stability at 180 °C. Studies of microstructural attributes show: (a) for Al-Si-V-Pd relative to Al-Si, texture is not significantly changed and average grain size is slightly increased, and (b) the dominant factor leading to a highly stable microstructure is the combined presence of finely dispersed, small precipitates of both (Al,V) and (Al,Pd) phases.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111040

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