Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 1086-1088
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A model based on semi-empirical molecular orbital calculations and molecular mechanics is proposed for oriented textured diamond film growth on the Si(111) surface. The diamond 〈111(approximately-greater-than) axis in our model is parallel to the silicon substrate 〈111(approximately-greater-than) while the diamond 〈11¯0(approximately-greater-than) is rotated 10.89° around the 〈111(approximately-greater-than) axis referenced to the 〈11¯0(approximately-greater-than) of the silicon substrate. The atomic density of the grown diamond in one dimension perpendicular to the 〈111(approximately-greater-than) has a ratio 1.003:1 to that of a natural crystal, and thus is much better than the 1:1.015 of the heteroepitaxial diamond on the silicon (001) surface. We conjecture that this improvement in lattice match is important to achieve single-crystal growth. A model for heteroepitaxial growth with a diamond 〈111(approximately-greater-than)//Si〈111(approximately-greater-than) and diamond 〈11¯0(approximately-greater-than)//Si〈11¯0(approximately-greater-than) relationship is also studied but is found to have poorer bonding to the substrate and has a larger residual mismatch of 1:1.015. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117066
|
Location |
Call Number |
Expected |
Availability |
