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Aspect ratio independent etching of dielectrics (1997)

Hwang, Gyeong S. ; Giapis, Konstantinos P.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 458-460

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (≤0.5 μm). © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119578

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