Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1715-1717
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Pseudodielectric function spectra of hexagonal (InGa)N epitaxial layers on GaN were obtained by spectroscopic ellipsometry and compared with photoreflection spectra. Composition and thickness of the InxGa1−xN layers grown by metalorganic chemical vapor deposition, were varied between 0.04≤x≤0.10 and 15–60 nm, respectively. The pseudodielectric function exhibits a clear maximum at the fundamental gap energy of the (InGa)N, which allows a determination of the In content via the composition dependence of that gap energy. The pseudodielectric function spectrum of a complete GaN/(InGa)N/(AlGa)N/GaN light-emitting diode structure shows maxima arising from fundamental gap interband transitions of all constituent layers including the (InGa)N active region. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122255
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