Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2355-2357
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The Ca dopant site in the GaN lattice has been investigated using ion channeling. Metal organic chemical vapor deposition grown GaN on c-plane sapphire substrates implanted with 40Ca at a dose of 1×1015 cm−2 with postimplant annealing were studied. Our results indicate that more than 80% of Ca are near Ga sites even in as-implanted samples, however, they are displaced by ∼0.2 Å from the Ga sites and that the Ca goes to the exact Ga sites after annealing at 1100 °C while the annealing did not change the apparent fraction of substitutional Ca. We suggest that the displaced Ca in the as-implanted sample are electrically compensated due to formation of complex defects with donor-like point defects and that CaGa becomes electrically active when these complex defects are broken and the point defects diffuse away with annealing at 1100 °C. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123849
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