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Optical properties of β-Si3N4 single crystals grown from a Si melt in N2 (1999)

Munakata, F. ; Matsuo, K. ; Furuya, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 3498-3500

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Large colored β-Si3N4 single crystals were successfully grown from a Si melt in N2. The transmission optical absorption of coloring β-Si3N4 single crystal shows that impurities introduce a midgap level of ∼2.4 eV into the wide band gap of ∼5.3 eV in nondoped Si3N4. The infrared transmission spectrum and electron probe x-ray microanalysis of β-Si3N4 samples show that the solution of the Al element affects the silicon–nitrogen molecular vibration and the states within the band gap of β-Si3N4. The obtained results mean that the Al impurity acts as the radiative center and is the origin of the color in the β-Si3N4 single crystal. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.124142

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