Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 747-749
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Magnetoresistance and the pseudo-Hall effect in NiFe/Cu/NiFe/FeMn spin-valve multilayers were measured simultaneously in fields rotating in the film plane. Large pseudo-Hall voltages have been observed when the magnetization of the free layer was perpendicular to the sensing current, which was applied along the magnetization of the pinned layer. The pseudo-Hall voltages cannot be explained by treating the anisotropic magnetoresistance of the two permalloy layers independently. Such a cross effect of the free and pinned layers on the anisotropic magnetoresistance is dependent upon the angle between their magnetization. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123111
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