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Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition (2002)

Takahashi, Makoto ; Todorobaru, Makoto

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2117-2119

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Highly oriented CdTe(111) films of high-crystalline quality were grown on a Si(111) substrate by pulsed-light-assisted electrodeposition at room temperature. Strong photoluminescence peaks due to the bound exciton recombination were observed for the electrodeposited CdTe films, confirming the high quality of the films prepared by the present method. Atomic-force microscopy measurements showed an atomically ordered arrangement and demonstrated the epitaxial growth of the CdTe films. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1463718

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