ISSN:
1432-0630
Keywords:
72.40.+w
;
72.20.−i
;
72.20.Jv
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The transient response of an extrinsic photoconductor, with two implanted ohmic contacts, has been calculated by solving the full continuity equation using a variable finite difference technique. For a step function in photon flux under constant voltage bias, transient times ranging from 10−4 to 10−2 s have been determined for 20 to 200 μm thick detectors under the low background fluxes typical of infrared astronomy. The transient response consists of a fast and a slow component, with their relative magnitudes dependent on the ratio of diffusion and drift lengths to the device length. The characteristic time for the fast component is determined, as expected, by the carrier lifetime, but a slower transient response is also present which is controlled by out-diffusion and sweep-out and the establishment of a counteracting electric field barrier. The effects of material and operating parameters have been investigated, and an analytical model is presented for estimating transient response times for any extrinsic photoconductor. Contact-limited transient response will be most limiting for operation of thin device structures under very low photon backgrounds.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00351897
