ISSN:
1573-1979
Schlagwort(e):
integrated circuit measurements
;
microwave measurements
;
MOSFETs
;
scattering parameters measurements
;
silicon-on-insulator technology
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
Notizen:
Abstract The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static small-signal model and the high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1008380615900