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Use of the two-dimensional TLM method in the electromagnetic simulation of thin semiconductor samples (1995)

Dindo, Salam F. ; Ney, Michel M. ; Harrison, Robert G.

Chichester [u.a.] : Wiley-Blackwell

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 77-94

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ISSN: 0894-3370

Keywords: Engineering ; Electrical and Electronics Engineering

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Electrical Engineering, Measurement and Control Technology

Notes: A two-dimensional lossy shunt TLM node is incorporated into a TLM system and adapted to model for the first time the Maxwell field equations in thin semiconductor samples. Both the characteristics of the node and the TLM system itself are fully described. By considering a parallel-plate structure containing a thin GaAs sample, driven by a voltage source, it is shown, with an example, that this TLM technique can simulate the response of non-stationary electromagnetic fields in a semiconductor to applied excitations.

Additional Material: 16 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/jnm.1660080202

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