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On the impurity states in doped semiconductors via the alternant molecular orbital method (1988)

Da Silva, A. Ferreira

New York, NY : Wiley-Blackwell

International Journal of Quantum Chemistry 34 (1988), S. 15-20

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ISSN: 0020-7608

Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology

Notes: We have investigated the impurity states in direct gap doped semiconductors via the alternant molecular orbital method with application to n-CdS. Good agreement compared with available experimental data and other calculations for resistivity and metal-nonmetal transition critical point are found. For spin susceptibility we have done an extensive calculation with and without correlation or disorder effects. Such calculation suggests experiments on concentration-dependent susceptibility in n-CdS.

Additional Material: 2 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/qua.560340805

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