ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract GaN:O solid solution films with various content of oxygen were obtained by the vapor phase deposition method using pyrolytic decomposition of gallium monoammine chloride in the presence of water vapors on substrates of crystalline quartz and silicon. Structure and optical properties of the films were studied to find that, as the oxygen content in the films increased, the energy gap at 300 K increased from 3.4 to 3.9 eV. Photoelectric properties of Si/GaN:O heterojunctions were studied. In a temperature range of 80–290 K, all heterojunctions are photosensitive; the photoresponse and the spectral characteristics depend on the oxygen content in the GaN:O film. The specific features of the “metallurgical” boundary of the heterojunction are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187973
