Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1682-1684
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Transient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions. © 1998 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.122244
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