ISSN:
1432-0630
Schlagwort(e):
73.40
;
81.10
;
81.15
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00324355