Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2870-2872
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermal desorption spectrometry has been applied to investigate the blistering and exfoliation phenomena which occur at the surface of a p-type (100) silicon wafer coimplanted with helium and deuterium. During the heat treatments in linear temperature ramp, an explosive emission of both gases occurs. The phenomenon is kinetically controlled with an effective activation energy of 1.3±0.2 eV. In addition, the desorption spectra present a second contribution, attributed to deuterium emission from buried cavities. Also in this case, the process is kinetically controlled with an effective activation energy of 1.9±0.3 eV. Thermal desorption spectrometry is a suitable technique to have information about various phenomena which occur during blistering and exfoliation. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1344568
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