Publication Date:
2015-04-25
Description:
We investigate the suitability of an epitaxial CaTiO 3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La 0.7 Sr 0.3 MnO 3 with silicon. The magnetic and electrical properties of La 0.7 Sr 0.3 MnO 3 films deposited by MBE on CaTiO 3 -buffered silicon (CaTiO 3 /Si) are compared with those deposited on SrTiO 3 -buffered silicon (SrTiO 3 /Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/ f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO 3 buffer layer. These results are relevant to device applications of La 0.7 Sr 0.3 MnO 3 thin films on silicon substrates.
Electronic ISSN:
2166-532X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics