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SNMS studies of ULSI gate interconnection structures (1991)

Moro, L. ; Lazzeri, P. ; Ottaviani, G. ; [et al.]

Springer

Fresenius' Zeitschrift für analytische Chemie 341 (1991), S. 20-24

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ISSN: 1618-2650

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Summary Polycide gate structures are widely used in ULSI (Ultra Large Scale Integration) devices. The distribution of the dopant between the various layers is of major concern. The effects of the fluorine incorporated during WSi2 deposition have been discussed because fluorine may diffuse into the gate oxide. We have studied the redistribution of boron, phosphorus and fluorine in WSi2/poly/SiO2/poly/SiO2/Si (bulk) gate structures by using hot e-gas SNMS and nuclear analyses (RBS/NRA), in samples subjected to thermal treatments that simulate the different steps of the ULSI fabrication sequence.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00322100

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