Publication Date:
2016-01-08
Description:
This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10 14 cm −2 ) and 90 keV (dose: 1 × 10 14 cm −2 ), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I DSmax at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g mmax was 83 mS/mm.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics