Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2031-2033
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present results of open tube Zn diffusion into undoped and S-doped n-type InP over the temperature range 550–675 °C. The process yields reproducible results which are consistent with an interstitial-substitutional diffusion model. For the undoped samples, an activation energy of 1.52 eV and a diffusion constant of 4.9×10−2 cm2/s are obtained. For heavily S-doped samples, values of 2.34 eV and 1.4×103 cm2/s, respectively, result. The difference in activation energy which is comparable to the Fermi level difference in the two substrate types is consistent with the different diffusion mechanisms which occur in these two types of InP.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98981
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