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20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy (1987)

Amano, Chikara ; Sugiura, Hideo ; Yamamoto, Akio ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 1998-2000

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the fabrication and the characteristics of Al0.4Ga0.6As/GaAs tandem solar cells. The annealing characteristics of GaAs tunnel diodes are studied. It is found that the degradation of the tunnel peak current density by the annealing is suppressed for the diodes composed of a GaAs tunnel junction sandwiched between AlGaAs layers. The tunnel junction is applied to the interconnect between the Al0.4Ga0.6As top cell and the GaAs bottom cell for the tandem solar cell. The cell has a short-circuit current density of 13.8 mA/cm2, an open-circuit voltage of 2.10 V, a fill factor of 70.0%, and a conversion efficiency of 20.2% at 1 sun, AM1.5. This efficiency is the highest ever reported at 1 sun for tandem solar cells.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98272

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