Publication Date:
2016-01-06
Description:
Titanium oxide (TiO 2 )-based photodetectors were fabricated using a thermal oxidation technique. The effect of two different annealing temperatures on morphology, structure, and I-V characteristics has been investigated. TiO 2 /Si heterostructure exhibited diode-like rectifying I-V behavior both in dark and under illumination. Dependence in photoresponse on annealing temperature was observed that was related to effective surface area of quasi-one-dimensional TiO 2 nanostructures. Fabricated TiO 2 /Si diodes in 850 °C as the lower annealing temperature showed higher responsivity and sensitivity compared with grown ones in 950 °C (R 850 °C /R 950 °C ∼ 5 and S 850 °C /S 950 °C ∼ 1.6). Rather good photoresponse and simple fabrication process make the 850 °C-TiO 2 /Si diode a promising candidate for practical applications.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
