Publikationsdatum:
2016-01-06
Beschreibung:
A high-dielectric constant (high- k ) TiO x thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiO x was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiO x /H-diamond was as high as 0.75 μ F/cm 2 contributed from the high- k value and the very thin thickness of the TiO x layer. The leakage current was lower than 10 −13 A at reverse biases and 10 −7 A at the forward bias of −2 V. The MOS field-effect transistor based on the high- k TiO x /H-diamond was demonstrated. The utilization of the high- k TiO x with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond metal-oxide semiconductor field effect transistors are anticipated.
Print ISSN:
0003-6951
Digitale ISSN:
1077-3118
Thema:
Physik
