Springer Online Journal Archives 1860-2000
Electrical Engineering, Measurement and Control Technology
Abstract The influence of the tunnel transmissivity T n,p of an insulation layer on the electric field distribution and the current-intensity j−I i relation in a pure, highly biased, high-resistivity metal-insulator-semiconductor-insulator-metal (MISIM) structure is investigated theoretically. It is shown that as T n,p decreases, carriers accumulate near the oppositely polarized electrodes, and their density rises sharply in layers having a thickness of the order of l k=kT/eE e (E e=V/d). The domain of parameters is determined. In this domian the accumulation effects are so strong as to increase the near-electrode fields appreciably, to the extent that they significantly exceed the mean field. The dependence of the current on the transmissivity is determined by the height of the Schottky barrier. In moderate fields, if the photocurrent is much higher than the dark current, the current density increases slightly with decreasing T n,p, tending to the maximum value eI i. In strong fields the current rises sharply as a result of carrier injection across the lowered potential barrier.
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