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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Semiconductors 31 (1997), S. 41-43 
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The reflection spectra in the infrared range and the optical Raman spectra are investigated in single crystals of the ternary compounds CuInS2 and CuInSe2 and in CuInS2x Se2(1−x) solid solutions, all grown by the method of chemical transport reactions. The frequencies of the optical modes in the given materials are determined, and the type of behavior of these modes in the solid solutions are established.
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  • 2
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial layers of ZnSe were grown on GaAs (100) by photostimulated vapor-phase epitaxy, using a He-Cd laser (power P⋍1 mW/cm2, hν=2.807 eV) at a substrate temperature of T= (175–300) K. The temperature dependences of the mobility of the majority charge carriers were studied in layers doped during growth, using such sources as AlCl3, Zn, Al, and Ga. Based on an analysis of the thermally stimulated current and thermally stimulated depolarization curves, parameters were established for seven deep local levels that have a substantial effect on the electrical characteristics of the heterostructures.
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  • 3
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of the tunnel transmissivity T n,p of an insulation layer on the electric field distribution and the current-intensity j−I i relation in a pure, highly biased, high-resistivity metal-insulator-semiconductor-insulator-metal (MISIM) structure is investigated theoretically. It is shown that as T n,p decreases, carriers accumulate near the oppositely polarized electrodes, and their density rises sharply in layers having a thickness of the order of l k=kT/eE e (E e=V/d). The domain of parameters is determined. In this domian the accumulation effects are so strong as to increase the near-electrode fields appreciably, to the extent that they significantly exceed the mean field. The dependence of the current on the transmissivity is determined by the height of the Schottky barrier. In moderate fields, if the photocurrent is much higher than the dark current, the current density increases slightly with decreasing T n,p, tending to the maximum value eI i. In strong fields the current rises sharply as a result of carrier injection across the lowered potential barrier.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Semiconductors 31 (1997), S. 36-40 
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstrect A theory of ion transfer processes in an insulating layer containing a uniform distribution of traps throughout its volume is formulated. It is shown that free ions localized near the surface are held in a potential well created by repulsion from trapped carriers. Accordingly, the activation energy of the free-ion current is higher than the mobility activation energy and decreases as the voltage is increased, while detrapping takes place with a time delay. The temperature dependence of the depolarization current has two or three peaks, whose positions and profiles change with the voltage. A distinctive feature of the transfer of ions through an insulator containing traps is the “memory” of the electric field driving the carriers toward the surface prior to the start of the transfer process.
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  • 5
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of the internal gettering process on the large-scale defects in Czochralski-grown boron-doped single-crystal silicon is investigated by low-angle mid-infrared light scattering. The large-scale defects in the as-grown material and crystals subjected to the internal gettering procedure are classified. The applicability of low-angle light scattering in laboratory investigations and in the industrial inspection of the operations in an internal gettering production cycle is demonstrated.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Semiconductors 31 (1997), S. 999-1002 
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The accumulation of structural defects in Si during the implantation of monatomic and diatomic nitrogen ions under equivalent conditions, i.e., at the same energies per atom and flux densities of the atoms, is investigated. The molecular effect in the accumulation of defects is observed only at doses for which the damage level in the crystal lattice exceeds 0.15. Under these conditions each N 2 + ion creates the same number of stable defects as do six N 1 + ions. In our experiments (30 keV for N 1 + and 60 keV for N 2 + at room temperature) the amorphization doses are equal to 3.75×1015 and 1.25×1015 ions/cm2 for N 1 + and N2/+, respectively.
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  • 7
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Microstructures in p-CuInSe2 single crystals tailored by the strong electric field have been studied using the method of local (d⩽1 µm) cathodoluminescence (CL). The shortest-wavelength radiation (ℏω=1.023 eV) has been observed from the n-type layer and longer-wavelength radiation (ℏω=1.006 eV)—from the p-type regions. An analysis of the cathodoluminescence spectra has allowed us to attribute the experimental features to optical transitions associated with donor and acceptor levels of V Cu, V Se, and Cui point defects in the crystal. Test measurements of EBIC, the C–V characteristics, and the DLT spectra confirm the cathodoluminescence data and reveal additional features of the p-n-p microstructures.
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  • 8
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of mismatch stress on the structural, optical, and transport properties of thick InGaAs layers grown on InP(100) substrates by molecular-beam epitaxy is investigated. It is found that layers having tensile stress can be grown with a greater mismatch than compressively stressed layers before plastic relaxation sets in. The critical mismatch for thick InGaAs layers is not described with sufficient accuracy by either the mechanical equilibrium model or the energy balance model. The range of mismatches required to obtain high carrier mobilities and high radiative recombination efficiencies in InGaAs layers grown on InP substrates is much narrower than the pseudomorphic growth range. The maximum mobilities and minimum widths of the photoluminescence peak are attained in layers matched with the substrate in terms of the lattice parameter and also in slightly gallium-enriched layers. The compositional dependence of the width of the band gap is investigated with allowance for the influence of stress.
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  • 9
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The magnetic-field and strain dependences of the photoelectric, photomagnetic, and photothermomagnetic characteristics are determined for the gapless semiconductor CdxHg1−x Te (x=0.04–0.16), in which an energy gap is opened by external effects. In excitation by infrared radiation the photosignal is observed to increase sharply with an increase in the applied magnetic field or uniaxial elastic deformation. For radiation in the millimeter spectral range the photoresponse exhibits giant oscillations associated with the variation of the electron density. This phenomenon is confirmed by the field dependence of the photomagnetic Hall effect. It is shown that the photothermomagnetic effect is a differential signal relative to the photoconductivity signal.
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  • 10
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of neutron irradiation (the energy E=2 MeV and the dose Φ=1013–1015cm−2) and subsequent anneals (the annealing temperature T a =400–700 °C and the annealing time is 30 min) of n-type GaAs(Te,Cu) crystals with an initial carrier concentration n 0=2×1018 cm−3 on the intensity of the copper-related luminescence band with an emission maximum at hν m =1.01 eV is studied. A significant irradiation-induced increase in the intensity of the band is observed. It is attributed to a radiation-stimulated increase in the concentration of emitting centers (CuGa V As pairs) as a result of the effective interaction of interstitial copper atoms with irradiation-induced gallium (V Ga) and arsenic (V As) vacancies, as well as V Ga V As divacancies.
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